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| TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l Low drain-source ON resistance: RDS (ON) = 11 m (typ.) l High forward transfer admittance: |Yfs| = 13 S (typ.) l Low leakage current: IDSS = 10 A (max) (VDS = 30 V) l Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 20 8 32 1.5 W PD(2) 1.1 Unit V V V A Drain power dissipation (t = 10 s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) JEDEC JEITA TOSHIBA 2-6J1E Weight: 0.08 g (typ.) PD (1) 0.75 W PD (2) EAS IAR EAR Tch Tstg 0.45 8 83.2 8 0.1 150 -55 to 150 mJ A mJ C C 1 2 3 4 7 6 5 Drain power dissipation (t = 10 s) (Note 2b) Circuit Configuration Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-18 TPC8210 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) 114 C/W 167 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 278 Marking (Note 6) TPC8210 Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: FR-4 25.4 25.4 0.8 (unit: mm) FR-4 25.4 25.4 0.8 (unit: mm) (a) (b) a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 8 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-02-18 TPC8210 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSS Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr RL = 3.7 W 10 V VGS 0V 4.7 W ID = 4 A VOUT 39 ns 32 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 4 A VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min -- 30 15 1.3 3/4 6.5 Typ. 3/4 13 11 13 3530 495 580 26 Max 10 10 3/4 2.5 20 15 pF Unit A A V V m S Turn-ON time Switching time Fall time ton tf toff Qg Qgs Qgd VDD ~ 15 V Duty < 1%, tw = 10 ms = Turn-OFF time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge 115 75 6 19 nC VDD 24 V, VGS = 10 V, ID = 8 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF IDR = 8 A, VGS = 0 V Test Condition -- Min -- -- Typ. -- -- Max 32 -1.2 Unit A V Forward voltage (diode) 3 2003-02-18 TPC8210 ID - VDS 20 3 4 6 8 10 Common source Ta = 25C Pulse test 2.9 2.8 10 8 10 8 6 ID - VDS 2.8 Common source Ta = 25C Pulse test 2.7 16 (A) ID 12 2.7 8 2.6 4 2.5 2.4 VGS = 2.3 V 0 0 1 2 3 4 5 ID (A) 3 6 2.9 Drain current Drain current 2.6 4 2.5 2 2.4 0 0 2.3 VGS = 2.2 V 0.8 1.0 0.2 0.4 0.6 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 10 V Pulse test 1 VDS - VGS Common source Ta = 25C Pulse test (V) VDS Drain-source voltage 100 25 Ta = -55C 16 0.8 ID (A) 12 0.6 Drain current 8 0.4 4 0.2 8 4 ID = 2A 0 0 0.5 1 1.5 2 2.5 3 2.5 4 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 100 RDS (ON) - ID Common source Ta = 25C Pulse test iYfsi (S) Drain-source ON resistance RDS (ON) (mW) -55C 10 Tc = 100C 30 VGE = 4.5 V 10 VGS = 10 V 3 Forward transfer admittance 25C 1 Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100 1 1 3 10 30 100 Drain current ID (A) Drain current ID (A) 4 2003-02-18 TPC8210 RDS (ON) - Ta (W) 25 100 IDR - VDS Drain-source ON resistance RDS (ON) 20 (A) ID = 8, 4, 2 A 5 15 VGS = 4.5 V ID = 8, 4, 2 A Drain reverse current IDR 3 10 1 VGS = 0 V 10 10 V 5 Common source Pulse test 0 -80 -40 0 40 80 120 160 1 0 Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Ciss 3 Vth - Ta Gate threshold voltage Vth (V) 2.5 (pF) 1000 Coss Crss 100 Common source VGS = 10 V ID = 1 mA Pulse test 10 0.1 1 10 100 2 Capacitance C 1.5 1 Common source 0.5 VDS = 10 V f = 1 mA Pulse test 0 -80 -40 0 40 80 120 140 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2 (1) Device mounted on a glass-epoxy board (a) (Note 2a) Dynamic input/output characteristics 30 Common source Ta = 25C ID = 8 A VDD = 24 V VDS 15 12 12 6 5 VDD = 24 V 5 6 10 15 Pulse test 20 30 (W) (V) PD VDS Drain power dissipation Drain-source voltage 1.0 (3) 10 0.5 (4) 0 0 50 100 150 200 0 0 20 40 60 80 0 100 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2003-02-18 Gate-source voltage (2) t = 10 s 20 VGS 1.5 (1) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (V) 25 25 TPC8210 rth - tw 1000 Single pulse (4) (3) (2) (1) 100 Normalized transient thermal impedance rth (C/W) 10 1 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 1 ms* ID max (pluse) * 10 (A) 10 ms* Drain current ID 1 0.1 0.01 0.01 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2003-02-18 TPC8210 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2003-02-18 |
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